Journal
NANO LETTERS
Volume 13, Issue 11, Pages 5509-5513Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4030819
Keywords
InN; nanowire; Mg doping; p-type
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada
- Fonds de recherche sur la nature et les technologies
- U.S. Army Research Office [W911NF-12-1-0477]
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In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by direct magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-urface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.
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