Journal
NANO LETTERS
Volume 13, Issue 4, Pages 1416-1421Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl400516a
Keywords
MoS2; photoluminescence; electroluminescence; photocurrent microscopy; nano-optics
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Funding
- EU grant NANOPOTS
- EU grant GENIUS
- EPSRC [EP/G042357/1, EP/K01711X/1, EP/K017144/1]
- Royal Society Wolfson Research Merit Award
- St. Edmund's College, Cambridge
- Engineering and Physical Sciences Research Council [EP/G042357/1, EP/K01711X/1, EP/K017144/1] Funding Source: researchfish
- EPSRC [EP/K01711X/1, EP/G042357/1, EP/K017144/1] Funding Source: UKRI
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We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.
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