Journal
NANO LETTERS
Volume 13, Issue 6, Pages 2782-2785Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401011x
Keywords
GaN; graphene; ZnO; heterostructures; laser; whispering-gallery-mode
Categories
Funding
- National Creative Research Initiative Project [R16-2004-01001-0]
- Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) [2010-0029300]
- Ministry of Education, Science and Technology
- National Research Foundation of Korea [2010-0029300] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Direct epitaxial growth of inorganic compound semiconductors on lattice-matched single-crystal substrates has provided an important way to fabricate light sources for various applications including lighting, displays and optical communications. Nevertheless, unconventional substrates such as silicon, amorphous glass, plastics, and metals must be used for emerging optoelectronic applications, such as high-speed photonic circuitry and flexible displays. However, high-quality film growth requires good matching of lattice constants and thermal expansion coefficients between the film and the supporting substrate. This restricts monolithic fabrication of optoelectronic devices on unconventional substrates. Here, we describe methods to grow high-quality gallium nitride (GaN) microdisks on amorphous silicon oxide layers formed on silicon using micropatterned graphene films as a nucleation layer. Highly crystalline GaN microdisks having hexagonal facets were grown on graphene dots with intermediate ZnO nanowalls via epitaxial lateral overgrowth. Furthermore, whispering-gallery-mode lasing from the GaN microdisk with a Q-factor of 1200 was observed at room temperature.
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