Journal
NANO LETTERS
Volume 13, Issue 2, Pages 374-377Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl303510h
Keywords
Gallium nitride; light-emitting diodes; nanowires; photoconductivity; optical interconnects
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Funding
- National Institute of Standards and Technology (NIST)
- DARPA Center on Nanoscale Science and Technology for Integrated Micro/Nano-Electromechanical Transducers (iMINT)
- DARPA N/MEMS S&T Fundamentals program by the Space and Naval Warfare Systems Center Pacific (SPAWAR) [N66001-10-1-4007]
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In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.
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