Journal
NANO LETTERS
Volume 13, Issue 7, Pages 3042-3047Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl400597d
Keywords
InGaN/GaN nanorod; nonradiative resonant energy transfer; lighting polymer; radiative recombination lifetime; nonradiative recombination lifetime
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Funding
- UK Engineering and Physical Sciences Research Council (EPSRC)
- EPSRC [EP/H004602/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H004602/1] Funding Source: researchfish
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A novel hybrid inorganic/organic semiconductor nanostructure has been developed, leading to very efficient nonradiative resonant-energy-transfer (RET) between blue emitting InGaN/GaN multiple quantum wells (MQWs) and a yellow light emitting polymer. The utilization of InGaN/GaN nanorod arrays allows for both higher optical performance of InGaN blue emission and a minimized separation between the InGaN/GaN MQWs and the emitting polymer as a color conversion medium. A significant reduction in decay lifetime of the excitons in the InGaN/GaN MQWs of the hybrid structure has been observed as a result of the nonradiative RET from the nitride emitter to the yellow polymer. A detailed calculation has demonstrated that the efficiency of the nonradiative RET is as high as 73%. The hybrid structure exhibits an extremely fast nonradiative RET with a rate of 0.76 ns(-1), approximately three times higher than the InGaN/GaN MQW nonradiative decay rate of 0.26 ns(-1). It means that the RET dominates the nonradiative processes in the nitride quantum well structure, which can further enhance the overall device performance.
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