Journal
NANO LETTERS
Volume 13, Issue 4, Pages 1852-1857Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl400687n
Keywords
Metal dichalcogenides; 2D materials; monolayer; transfer
Categories
Funding
- National Science Foundation [NSF DMR 0845358]
- Materials, Structures and Device (MSD) Center
- one of the five programs in the focus center research program (FCRP)
- Semiconductor Research Corporation program
- Graphene Approaches to Terahertz Electronics (GATE)-MURI [N00014-09-1-1063]
- Office of Naval Research (ONR) Young Investigator Program
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0845358] Funding Source: National Science Foundation
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Recently, monolayers of layered transition metal dichalcogenides (LTMD), such as MX2 (M = Mo, W and X = S, Se), have been reported to exhibit significant spin-valley coupling and optoelectronic performances because of the unique structural symmetry and band structures. Monolayers in this class of materials offered a burgeoning field in fundamental physics, energy harvesting, electronics, and optoelectronics. However, most studies to date are hindered by great challenges on the synthesis and transfer of high-quality LTMD monolayers. Hence, a feasible synthetic process to overcome the challenges is essential. Here, we demonstrate the growth of high-quality MS2 (M = Mo, W) monolayers using ambient-pressure chemical vapor deposition (APCVD) with the seeding of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS). The growth of a MS2 monolayer is achieved on various surfaces with a significant flexibility to surface corrugation. Electronic transport and optical performances of the as-grown MS2 monolayers are comparable to those of exfoliated MS2 monolayers. We also demonstrate a robust technique in transferring the MS2 monolayer samples to diverse surfaces, which may stimulate the progress on the class of materials and open a new route toward the synthesis of various novel hybrid structures with LTMD monolayer and functional materials.
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