Journal
NANO LETTERS
Volume 13, Issue 8, Pages 3870-3877Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401938t
Keywords
Molybdenum disulfide; chemical vapor deposition; van der Waals epitaxy; photoluminescence; valley polarization
Categories
Funding
- Ministry of Science and Technology of China [2011CB921903, 2012CB921404, 2012CB933404, 2013CB932603, 2011CB933003, 2009CB929301]
- National Natural Science Foundation of China [51222201, 51290272, 51121091, 51072004, 21073003, 11225421, 10934007]
Ask authors/readers for more resources
Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (similar to 2.7%). Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization similar to 0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available