Journal
NANO LETTERS
Volume 14, Issue 1, Pages 183-190Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl403712f
Keywords
InP nanowire; silicon; type-II wurtzite; photovoltaics; nanolaser
Categories
Funding
- U.S. DOE [DE-EE0005316]
- DoD NSSEFF [N00244-09-1-0013, N00244-09-1-0080]
- California Advanced Solar Technologies Institute, UC Multicampus Research Program and Institute (MRPI)
- Center for Energy Efficient Electronics Science (NSF) [0939514]
- Alexander von Humboldt Research Award
- Directorate For Engineering [1335609] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [1335609] Funding Source: National Science Foundation
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Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 mu m. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.
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