Journal
NANO LETTERS
Volume 13, Issue 5, Pages 1890-1897Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl303410g
Keywords
CVD grown graphene; n-type doping; Dirac point; solution-process; transistor; inkjet-printing
Categories
Funding
- AFOSR [FA9950-09-1-0256]
- National Science Foundation Materials Network Program (NSF) [DMR-1209468]
- Global Climate and Energy Project (GCEP)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1209468] Funding Source: National Science Foundation
Ask authors/readers for more resources
Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethy1-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available