4.8 Article

Tunable Carrier Type and Density in Graphene/PbZr0.2Ti0.8O3 Hybrid Structures through Ferroelectric Switching

Journal

NANO LETTERS
Volume 13, Issue 4, Pages 1693-1698

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl4002052

Keywords

CVD graphene; ferroelectrics; PbZr0.2Ti0.8O3; polarization reversal; interface

Funding

  1. National Science Foundation
  2. Nanoelectronics Research Initiative [DMR-1124696, DMR-09-05175]
  3. Army Research Office [W911NF-10-1-0482]
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [0905175, 1124696] Funding Source: National Science Foundation

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Bidirectional interdependency between graphene doping level and ferroelectric polarization is demonstrated in graphene/PbZr0.2Ti0.8O3 hybrid structures. The polarization of the PbZr0.2Ti0.8O3 can be effectively switched with graphene electrodes and can in turn alter carrier type and density in the graphene. A complete reversal of the current-voltage hysteresis direction is observed in the graphene when external environmental factors are minimized, converting p-type graphene into n-type with an estimated carrier density change as large as similar to 10(13) cm(-2). Nonvolatility and reversibility are also demonstrated.

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