Journal
NANO LETTERS
Volume 13, Issue 6, Pages 2851-2856Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401186d
Keywords
Bi-based chalcogenides; topological insulators; Bi2Te3-xSex; seven-layer nanolamellae
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Funding
- National Science Foundation of China [11174244]
- National 973 Program of China [2013CB934600, 2009CB623700]
- Zhejiang Provincial Natural Science Foundation of China [LR12A04002]
- National Young 1000 Talents Program of China
- Fundamental Research Funds for the Central Universities
- NSF [DMR 0850934]
- Department of Energy (DOE) [DE-SC0002623]
- Defense Advanced Research Project Agency (DARPA) [N66001-12-1-4034]
- Focus Center Research Program-Center on Functional Engineered Nano Architectonics (FENA)
- DARPA
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0850934] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-SC0002623] Funding Source: U.S. Department of Energy (DOE)
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We present a direct atom-by-atom chemical identification of the nanostructures and defects of topological insulators (TIs) with a state-of-the-art atomic mapping technology. Combining this technique and density function theory calculations, we identify and explain the layer chemistry evolution of Bi2Te3-xSex ternary TIs. We also reveal a long neglected but crucially important extended defect found to be universally present in Bi2Te3 films, the seven layer Bi3Te4 nanolamella acceptors. Intriguingly, this defect is found to locally pull down the conduction band, leading to local n-type conductivity, despite being an acceptor which pins the Fermi energy near the valence band maximum. This nanolamella may explain inconsistencies in measured conduction type as well as open up a new route to manipulate bulk carrier concentration. Our work may pave the way to more thoroughly understand and tailor the nature of the bulk, as well as secure controllable bulk states for future applications in quantum computing and dissipationless devices.
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