Journal
NANO LETTERS
Volume 13, Issue 3, Pages 942-947Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl303587r
Keywords
Epitaxial graphene; silicon carbide; field effect transistors; high frequency electronics; nanoelectronics; maximum oscillation frequency
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Funding
- W. M. Keck Foundation
- AFSOR [FA9550-10-1-0367]
- NSF MRSEC Program [DMR-0820382]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
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The maximum oscillation frequency (f(max)) quantifies the practical upper bound for useful circuit operation. We report here an f(max) of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high kappa dielectric T-gate and self-aligned contacts further contributed to the record-breaking f(max).
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