Journal
NANO LETTERS
Volume 13, Issue 5, Pages 1941-1947Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl3046552
Keywords
GaP/ZnS; nanocable; heteroepitaxial growth; optoelectronic response
Categories
Funding
- National Natural Science Foundation of China [91123006, 21001028, 51002032]
- National Basic Research Program of China [2012CB932303]
- Shanghai Chenguang Foundation [11CG06]
- Shanghai Pujiang Program [11PJ1400300, 12PJ1400300]
- Shanghai Shu Guang Project [12SG01]
- Science and Technology Commission of Shanghai Municipality [11520706200]
- Programs for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning and for New Century Excellent Talents in University [NCET-11-0102]
- scientific research foundation for the returned overseas Chinese scholars, state education ministry
- National Science Foundation [DMR-0819762, DMR-0745555]
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We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core shell structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP (111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on the (100) plane of the cubic GaP core. Compared with the unitary ZnS nanobelts, the GaP/ZnS coaxial nanocables exhibit improved optoelectronic properties such as high photocurrent and excellent photocurrent stability. This approach opens up new strategy to boost the performance of ZnS-based photodetectors.
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