Journal
NANO LETTERS
Volume 14, Issue 1, Pages 326-332Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl404085a
Keywords
Nanowire; III-V; antimonide; GaAsSb; crystal structure; silicon; zinc blende; twin-free; transmission electron microscopy; energy dispersive X-ray spectroscopy; molecular beam epitaxy; X-ray diffraction; synchrotron radiation
Categories
Funding
- French National Research Agency (ANR), TERADOT project [ANR-11-JS04-002-01]
- Australian Research Council (ARC), Future Fellowship [FT120100498]
- European Research Counsil (ERC)
- NCCR on Quantum Science and Technology
- SNSF
- Austrian Academy of Sciences (DOC scholarship)
- FWF, Vienna [P23706-N19]
- Australian Research Council [FT120100498] Funding Source: Australian Research Council
- Austrian Science Fund (FWF) [P 23706] Funding Source: researchfish
- Austrian Science Fund (FWF) [P23706] Funding Source: Austrian Science Fund (FWF)
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With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal-oxide-semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1-x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires' complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.
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