Journal
NANO LETTERS
Volume 13, Issue 6, Pages 2777-2781Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4010089
Keywords
2D materials; atomically thin; gallium selenide; photoconductivity; vapor phase growth
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Funding
- U.S. Army Research Office MURI [W911NF-11-1-0362]
- STARnet
- FAME
- MARCO
- DARPA
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We report the direct growth of large, atomically thin GaSe single crystals on insulating substrates by vapor phase mass transport. A correlation is identified between the number of layers and a Raman shift and intensity change. We found obvious contrast of the resistance of the material in the dark and when illuminated with visible light. In the photoconductivity measurement we observed a low dark current. The on-off ratio measured with a 405 nm at 0.5 mW/mm(2) light source is in the order of 10 (3); the photoresponsivity is 17 mA/W, and the quantum efficiency is 5.2%, suggesting possibility for photodetector and sensor applications. The photocurrent spectrum of few-layer GaSe shows an intense blue shift of the excitation edge and expanded band gap compared with bulk material.
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