Journal
NANO LETTERS
Volume 13, Issue 12, Pages 6064-6069Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl403312y
Keywords
Topological insulators; electronic structure; heterostructures; electric field
Categories
Funding
- Ministry of Education and Science of the Russian Federation [2.8575.2013]
- Federal Targeted Program Scientific and scientific-pedagogical personnel of innovative Russia [14.B37.21.1164]
- Russian Foundation for Basic Research [13-02-12110 ofi_m]
- German Research Foundation (DFG) [ER 340/4-1, 1666]
Ask authors/readers for more resources
The ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available