Journal
NANO LETTERS
Volume 13, Issue 2, Pages 651-657Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl304246d
Keywords
Graphene; resistive random access memory; oxygen ions movement; Raman spectroscopy; filaments
Categories
Funding
- National Natural Science Foundation [61025021, 60936002, 51072089, 61020106006]
- National Key Project of Science & Technology of China [2009ZX02023-001-3, 2011ZX02403-002]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)
- Stanford Nanofabrication Facility (SNF)
- NSF-supported National Nanotechnology Infrastructure Network (NNIN)
- Molecular Foundry at the Lawrence Berkeley National Laboratory
- Ministry of Education Scholarship of China
- Stanford Graduate Fellowship
- Stanford School of Engineering China Research Exchange Program
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In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.
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