Journal
NANO LETTERS
Volume 13, Issue 11, Pages 5264-5270Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4027346
Keywords
Rashba effect; spin field effect transistor; two-dimensional LaOBiS2; biaxial strain; electric field; density functional theory
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Funding
- Center for Inverse design, a DOE Energy Frontier Research Center
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Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking bather, two counter-helical Rashba spin polarizations are localized at different BiS2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.
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