Journal
NANO LETTERS
Volume 13, Issue 5, Pages 2182-2188Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl400674k
Keywords
Graphene Schottky diode; chemical doping of graphene; chemical sensor; ideality factor; Schottky barrier height
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Funding
- SFI [08/CE/I1432, PI_10/IN.1/13030]
- EU [266391]
- NMP-ICT GRAFOL [285275]
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We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocompatible sensors.
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