Journal
NANO LETTERS
Volume 13, Issue 10, Pages 4624-4631Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401601x
Keywords
Graphene; solid carbon; low temperature; diffusion barrier; in situ; XPS; XRD
Categories
Funding
- EPSRC
- Sidney Sussex College
- ERC Grant InsituNANO [279342]
- Cambridge Commonwealth Trust
- EUFP7 Work Programme [285275]
- EPSRC [EP/K016636/1]
- [EP/H047565/1]
- Engineering and Physical Sciences Research Council [EP/H047565/1] Funding Source: researchfish
- EPSRC [EP/K016636/1, EP/H047565/1] Funding Source: UKRI
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Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform nnonolayer graphene at 600 degrees C with domain sizes exceeding 50 mu m and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.
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