Journal
NANO LETTERS
Volume 13, Issue 10, Pages 4650-4653Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401710f
Keywords
Piezoresistance; piezotronic; chalcogenide; electrical transport; nanoelectromechanical systems (NEMS); MEMS
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Funding
- Space and Naval Warfare Systems Command (SPAWAR) [N66001-11-C-4109]
- Defense Advanced Research Projects Agency (DARPA)
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Sophisticated microelectromechanical systems for device and sensor applicaticns have flourished in the past decade. These devices exploit piezoelectric, capacitive, and piezoresistive effects, and coupling between them. However, high-performance piezoresiitivity (as defined by on/off ratio) has primarily been observei in macroscopic single crystals.' In 10 this Letter, we show for the first time that rare-earth monochalcogenides in thin film form can modulate a current by more than 1000 times clue to a pressure-induced insulator to metal transition. Furtherniorc, films as thin as 8 nm show a piezoresistive response. The conlbination of high performance and scalability make these promising applications, such as the recently proposed piezoelectronic transistor (PET) 2,3 The PET would mechanically couple a piezoelectric thin film with II a piezoresistive switching layer, potentially scaling to higher speeds and lower powers than today's complementary metal oxide scmiconductor technology.
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