Journal
NANO LETTERS
Volume 13, Issue 10, Pages 4827-4832Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl402544n
Keywords
Graphene; graphite; SiC; silicon carbide; graphite thin film; dopants
Categories
Funding
- NSF [DMR-1206793, DMR-1206655, DMR-1206256, DMR-1005880]
- W.M. Keck Foundation
- U.S. DOE, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206256, 1005880, 1206655] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206793] Funding Source: National Science Foundation
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All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.
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