Journal
NANO LETTERS
Volume 12, Issue 8, Pages 4013-4017Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl301335q
Keywords
Two-dimensional material; transition metal dichalcogenide; molybdenum disulfide; electric double-layer transistor; flexible electronics
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Funding
- MEXT, Japan [17069003, 22656003]
- Waseda University [2011A-501]
- Funding Program for the Next Generation of World-Leading Researchers
- JSPS [21224009]
- SICORP from JST
- Academia Sinica
- National Science Council in Taiwan [NSC-99-2112-M-001-021-MY3]
- Grants-in-Aid for Scientific Research [21224009, 22656003] Funding Source: KAKEN
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Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V.s)) and a high on/off current ratio (10(5)). Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS2 films make them suitable for use in large-area flexible electronics.
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