Journal
NANO LETTERS
Volume 12, Issue 9, Pages 4889-4894Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl302436r
Keywords
Colloidal quantum dots; PbS; homojunction; n-type; photovoltaics
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Funding
- King Abdullah University of Science and Technology (KAUST) [KUS-11-009-21]
- Ontario Research Fund Research Excellence Program
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- NSERC CGS D Scholarship
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Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.
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