4.8 Article

On the Origin of Photoluminescence in Silicon Nanocrystals: Pressure-Dependent Structural and Optical Studies

Journal

NANO LETTERS
Volume 12, Issue 8, Pages 4200-4205

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl301787g

Keywords

Quantum dot; nanocrystal; silicon; pressure; photoluminescence; X-ray diffraction; diamond anvil cell

Funding

  1. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-ACO2-06CH11357]
  2. National Science Foundation
  3. Earth Sciences [EAR-0622171]
  4. Department of Energy
  5. Geosciences [DE-FG02-94ER14466]
  6. Center for Advanced Solar Photophysics
  7. Department of Energy, Office of Basic Energy Sciences
  8. Nonequilibrium Energy Research Center (NERC)
  9. U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0000989]
  10. Energy Frontier Research Center

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A lack of consensus persists regarding the origin of photoluminescence in silicon nanocrystals. Here we report pressure-dependences of X-ray diffraction and photoluminescence from alkane-terminated colloidal particles. We determine the diamond-phase bulk modulus, observe multiple phase transitions, and importantly find a systematic photoluminescence red shift that matches the X-conduction-to-Gamma(valence) transition of bulk crystalline silicon. These results, reinforced by calculations, suggest that the efficient photoluminescence, frequently attributed to defects, arises instead from core-states that remain highly indirect despite quantum confinement.

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