Journal
NANO LETTERS
Volume 12, Issue 7, Pages 3472-3476Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl300948c
Keywords
Graphene; graphene oxide; flexible electronics; thin film transistor
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Funding
- Basic Research Program
- Global Frontier Research Center for Advanced Soft Electronics through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [20090083540, 20090092809, 2012006049, 20110031635]
- Ministry of Knowledge Economy of Korea [2008-F024-02]
- World Class University program [R31-2008-10029]
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High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GC) dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 x 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V.s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.
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