Journal
NANO LETTERS
Volume 12, Issue 3, Pages 1437-1442Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl204114t
Keywords
Magnetoelectric effect; electric field control of magnetic properties; charge trap flash memory; magneto-optical writing; magnetic anisotropy
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Funding
- NSF-ECCS [1128439]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1128439] Funding Source: National Science Foundation
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It is demonstrated that a charge-trapping layer placed in proximity to a ferromagnetic metal enables efficient electrical and optical control of the metal's magnetic properties. Retention of charge trapped inside the charge-trapping layer provides nonvolatility to the magnetoelectric effect and enhances its efficiency by an order of magnitude. As such, an engineered charge-trapping layer can be used to realize the magnetoelectric equivalent to today's pervasive charge trap flash memory technology. Moreover, by supplying trapped charges optically instead of electrically, a focused laser beam can be used to imprint the magnetic state into a continuous metal film.
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