Journal
NANO LETTERS
Volume 12, Issue 3, Pages 1184-1188Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203316r
Keywords
Graphene; single-layer; solution-based; transistor; high-frequency; flexible electronics
Categories
Funding
- National Science Foundation [DMR-1006391, DMR-1121262]
- Nanoelectronics Research Initiative
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1121262, 1006391] Funding Source: National Science Foundation
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Flexible electronics mostly relies on organic semiconductors but the limited carrier velocity in polymers and molecular films prevents their use at frequencies above a few megahertz. Conversely, the high potential of graphene for high-frequency electronics on rigid substrates was recently demonstrated. We conducted the first study of solution-based graphene transistors at gigahertz frequencies, and we show that solution-based single-layer graphene ideally combines the required properties to achieve high. speed flexible electronics on plastic substrates. Our graphene flexible transistors have current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio frequency measurements directly performed on bent samples show remarkable mechanical stability of these devices and demonstrate the advantages of solution-based graphene field-effect transistors over other types of flexible transistors based on organic materials.
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