Journal
NANO LETTERS
Volume 12, Issue 5, Pages 2631-2638Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl301104z
Keywords
Quantum dots; band-transport; field-effect transistor; cadmium-selenide; doping; thermal diffusion; thiocyanate
Categories
Funding
- NSF MRSEC [DMR11-20901]
- NSF [DMR11-20901, DMS-0935165]
- U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0002158]
- NSF-CBET [CBET-0854226]
- Northrop Grumann
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0854226] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1120901] Funding Source: National Science Foundation
- Division Of Mathematical Sciences
- Direct For Mathematical & Physical Scien [0935165] Funding Source: National Science Foundation
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We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO2 gate insulator that is extended to 140 K by reducing the interface trap density using an Al2O3/SiO2 gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics.
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