Journal
NANO LETTERS
Volume 12, Issue 10, Pages 5412-5417Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl302896n
Keywords
Nanowire; waveguiding Mie scattering; second-harmonic generation; GaAs; far-field microscopy
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Funding
- Carl Zeiss Foundation
- DFG excellence program JSMC
- BMBF project NAWION [FKZ: 16SV5386K, V4MNI014]
- Ziel2 project Nanowire solar cells and light emitters (Nasol)
- European Commission
- Nano III-V PIN project of the BMBF
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The optical and electrical characterization of nanostructures is crucial for all applications in nanophotonics. Particularly important is the knowledge of the optical near-field distribution for the design of future photonic devices. A common method to determine optical near-fields is scanning near-field optical microscopy (SNOM) which is slow and might distort the near-field. Here, we present a technique that permits sensing indirectly the infrared near-field in GaAs nanowires via its second-harmonic generated (SHG) signal utilizing a nonscanning far-field microscope. Using an incident light of 820 nm and the very short mean free path (16 nm) of the SHG signal in GaAs, we demonstrate a fast surface sensitive imaging technique without using a SNOM. We observe periodic intensity patterns in untapered and tapered GaAs nanowires that are attributed to the fundamental mode of a guided wave modulating the Mie-scattered incident light. The periodicity of the interferences permits to accurately determine the nanowires' radii by just using optical microscopy, i.e., without requiring electron microscopy.
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