Journal
NANO LETTERS
Volume 12, Issue 8, Pages 3893-3899Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl3002974
Keywords
Graphene; Cu; STM; strain; surface reconstruction; dislocation
Categories
Funding
- Argonne National Laboratory (ANL) Center for Nanoscale Materials (CNM) [998]
- NSF
- DHS
- NRI-MIND center
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- DOE SISGR [DE-FG02-09ER16109]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0847638] Funding Source: National Science Foundation
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An atomic-scale study utilizing scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV) is performed on large single crystalline graphene grains synthesized on Cu foil by a chemical vapor deposition (CVD) method. After thermal annealing, we observe the presence of periodic surface depressions (stripe patterns) that exhibit long-range order formed in the area of Cu covered by graphene. We suggest that the observed stripe pattern is a Cu surface reconstruction formed by partial dislocations (which appeared to be stair-rod-like) resulting from the strain induced by the graphene overlayer. In addition, these graphene grains are shown to be more decoupled from the Cu substrate compared to previously studied grains that exhibited Moire patterns.
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