Journal
NANO LETTERS
Volume 12, Issue 3, Pages 1311-1316Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203848t
Keywords
Zinc oxide (p-type); nanowire; Sb doping; inversion domain boundary; scanning transmission electron microscopy; density function theory
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Funding
- Department of Energy, Basic Energy Sciences [DE-FG02-08ER46547]
- Air Force of Scientific Research [FA9550-091-0482]
- UW-NSF Nanoscale Science and Engineering Center (NSEC) [DMR-0425880]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [832760] Funding Source: National Science Foundation
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We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of 0 per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.
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