Journal
NANO LETTERS
Volume 12, Issue 8, Pages 4336-4340Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl302078w
Keywords
Spectroscopy on single quantum dots; self-assembled quantum dots; near-field microscopy; intersublevel transitions
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Funding
- German Science Foundation DFG [HE 3352/4-1, EN 434/22-1]
- German Ministry of Education and Research (BMBF) [05K10BRA, 05K10ODB]
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Using scattering-type near-field infrared microscopy in combination with a free-electron laser, intersublevel transitions in buried single InAs quantum dots are investigated. The experiments are performed at room temperature on doped self-assembled quantum dots capped with a 70 nm GaAs layer. Clear near-field contrast of single dots is observed when the photon energy of the incident beam matches intersublevel transition energies, namely the p-d and s-d transition of conduction band electrons confined in the dots. The observed room-temperature line width of 5-8 meV of these resonances in the mid-infrared range is significantly below the inhomogeneously broadened spectral lines of quantum dot ensembles. The experiment highlights the strength of near-field microspectroscopy by demonstrating signals from bound-to-bound transitions of single electrons in a probe volume of the order of (100 nm)(3).
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