Journal
NANO LETTERS
Volume 12, Issue 6, Pages 3263-3267Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl301325h
Keywords
indium arsenide; nanowire; spin orbit coupling; Rashba effect; ID weak anti-localization
Categories
Funding
- NSF [DMR-1151534]
- American Chemical Society [48800-DNI10]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1151534] Funding Source: National Science Foundation
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A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in In As nanowires where a strong electric field is created by either a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables 6-fold tuning of Rashba coefficient and nearly 3 orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in devices.
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