Angle-Dependent Carrier Transmission in Graphene p-n Junctions

Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p-n junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle.