Journal
NANO LETTERS
Volume 12, Issue 3, Pages 1498-1502Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl2042497
Keywords
Spin transport; Hanle precession; graphene; epitaxial growth
Categories
Funding
- NanoNed
- Zernike Institute for Advanced Materials
- Foundation for Fundamental Research on Matter (FOM)
- Deutsche Forschungsgemeinschaft
- European Union [257829]
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We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau(s) in monolayer graphene, while the spin diffusion coefficient D-s is strongly reduced compared to typical results on exfoliated graphene. The increase of tau(s) is probably related to the changed substrate, while the cause for the small value of D-s remains an open question.
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