Journal
NANO LETTERS
Volume 12, Issue 3, Pages 1235-1240Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203597d
Keywords
Block copolymer; self-assembly; resistive memory; nanodot; Pt; graphene
Categories
Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2011K000623, SIRC-2011-0031852]
- Smart IT Convergence System Research Center
- Ministry of Knowledge Economy (MEK)
- Korea Research Council for Industrial Science and Technology (ISTK) [B551179-09-07, 10040038]
- Korea government
- Korea Evaluation Institute of Industrial Technology (KEIT) [10040038] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
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