Journal
NANO LETTERS
Volume 12, Issue 5, Pages 2217-2221Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl204039q
Keywords
Resistive memory; flexible memory; multilevel memory; carbon nanotube; charge trap
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Funding
- National Research Laboratory [R0A-2008-000-20057-0]
- Converging Research Center [2011K000642]
- Smart IT Convergence System Research Center
- MKE
- MEST of Republic of Korea
- National Research Foundation of Korea [R0A-2008-000-20057-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON-OFF ratio >10(2), endurance cycle >10(2), retention time >10(5)) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.
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