4.8 Article

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

Journal

NANO LETTERS
Volume 12, Issue 3, Pages 1527-1533

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl2043375

Keywords

Flexible electronics; thin-film transistors; semiconducting nanotube networks; integrated circuits; radio frequency applications

Funding

  1. NSF COINS
  2. NSF
  3. DARPA/DSO Maximum Mobility and Manipulation
  4. Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
  5. World Class University at Sunchon National University
  6. Sloan Fellowship
  7. National Research Foundation of Korea [R31-2012-000-10022-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. Div Of Civil, Mechanical, & Manufact Inn
  9. Directorate For Engineering [0847076] Funding Source: National Science Foundation

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Solution-processed thin-films of semiconducting carbon nanotubes as the channel material for flexible electronics simultaneously offers high performance, low cost, and ambient stability, which significantly outruns the organic semiconductor materials. In this work, we report the use of semiconductor-enriched carbon nanotubes for high-performance integrated circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The as-obtained thin-film transistors (TFTs) exhibit highly uniform device performance with on-current and transconductance up to 15 mu A/mu m and 4 mu S/mu m. By performing capacitance voltage measurements, the gate capacitance of the nanotube TFT is precisely extracted and the corresponding peak effective device mobility is evaluated to be around 50 cm(2)V(-1)s(-1). Wing such devices, digital logic gates including inverters, NAND, and NOR gates with superior bending stability have been demonstrated. Moreover, radio frequency measurements show that cutoff frequency of 170 MHz can be achieved in devices with a relatively long channel length of 4 mu m, which is sufficient for certain wireless communication applications. This proof-of-concept demonstration indicates that our platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.

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