4.8 Article

Large Physisorption Strain in Chemical Vapor Deposition of Graphene on Copper Substrates

Journal

NANO LETTERS
Volume 12, Issue 5, Pages 2408-2413

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl300397v

Keywords

Graphene; CVD; strain; copper

Funding

  1. ONR (Graphene MURI)
  2. Nanoscale Science and Engineering Initiative of the National Science Foundation [CHE-0641523]
  3. AFOSR [FA9550-10-1-0068]
  4. EFRC Center for Re-defining Photo-voltaic Efficiency through Molecule Scale Control [SC0001085]
  5. New York State Office of Science, Technology, and Academic Research (NYSTAR)
  6. Priority Research Centers [2011-0018395]
  7. National Research Foundation of Korea (NRF) [2011-0029645]
  8. Ministry of Education, Science and Technology
  9. National Research Foundation of Korea [2011-0029645] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available