4.8 Article

Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

Journal

NANO LETTERS
Volume 12, Issue 4, Pages 1765-1771

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl3001088

Keywords

Heterointerfaces; complex oxides; oxygen vacancies; piezoresponse force microscopy

Funding

  1. National Science Foundation (NSF) [DMR-0906443, EPS-1010674]
  2. Materials Research Science and Engineering Center (NSF) [DMR-0820521]
  3. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (DOE) [DE-SC0004876]
  4. Semiconductor Research Corporation (SRC) [G11016]
  5. Nebraska Research Initiative
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [0906443] Funding Source: National Science Foundation
  8. Division Of Materials Research
  9. Direct For Mathematical & Physical Scien [0820521] Funding Source: National Science Foundation
  10. U.S. Department of Energy (DOE) [DE-SC0004876] Funding Source: U.S. Department of Energy (DOE)

Ask authors/readers for more resources

Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

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