Journal
NANO LETTERS
Volume 12, Issue 12, Pages 6164-6169Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl302989v
Keywords
Topological insulator; Bi2Se3; nanoribbons; catalyst-free growth
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Funding
- Department of Energy, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- Center for Emergent Superconductivity, an Energy Frontier Research Center
- US Department of Energy, Office of Science, Office of Basic Energy Sciences
- US Department of Energy [DE-AC02-06CH11357]
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We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (11 (2) over bar0) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states. The catalyst-free synthesis yields high-purity nanocrystals enabling the observation of a large number of SdH oscillation periods and allowing for an accurate determination of the pi-Berry phase, one of the key features of Dirac fermions in topological insulators. The long-length nanoribbons open the possibility for fabricating multiple nanoelectronic devices on a single nanoribbon.
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