Journal
NANO LETTERS
Volume 11, Issue 6, Pages 2396-2399Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl200758b
Keywords
Boron nitride; encapsulated graphene; ballistic transport; negative bend resistance; top gate
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Funding
- Korber Foundation
- Engineering and Physical Sciences Research Council (U.K)
- Office of Naval Research
- Air Force Office of Scientific Research
- Royal Society
- EPSRC [EP/G035954/1] Funding Source: UKRI
- Grants-in-Aid for Scientific Research [23310096] Funding Source: KAKEN
- Engineering and Physical Sciences Research Council [EP/G035954/1] Funding Source: researchfish
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Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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