4.8 Article

Photoluminescence from Chemically Exfoliated MoS2

Journal

NANO LETTERS
Volume 11, Issue 12, Pages 5111-5116

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl201874w

Keywords

MoS2; photoluminescence; exfoliation; phase transformation; dispersion

Funding

  1. Royal Society
  2. Centre for Advanced Structural Ceramics (CASC) at Imperial College London
  3. Singapore National Research Foundation under NRF RF
  4. Japan Society for the Promotion of Science (JSPS)
  5. Rutgers University
  6. JST, PRESTO
  7. Division Of Materials Research
  8. Direct For Mathematical & Physical Scien [0923246] Funding Source: National Science Foundation

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A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 degrees C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.

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