Journal
NANO LETTERS
Volume 12, Issue 1, Pages 141-144Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl2031629
Keywords
Graphene; vacancy; metal-vacancy complex; doping transmission electron microscopy
Categories
Funding
- National Science Foundation of China [10832009, 11090333]
- Science Foundation of Chinese University [2011QNA4038]
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Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.
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