Journal
NANO LETTERS
Volume 11, Issue 8, Pages 3263-3266Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl2015729
Keywords
Transition metal oxide; hole extraction layer; quantum dot; solar cell; band bending; gap states
Categories
Funding
- NREL
- U.S. DOE Office of Science
- DOE [DE-AC36-08GO28308]
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The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoOx) and vanadium oxide (V2Ox) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoOx HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoOx and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoOx. The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoOx layer.
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