Journal
NANO LETTERS
Volume 12, Issue 1, Pages 113-118Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203065e
Keywords
Silicene; germanene; band gap; quantum transport; electric field; first-principles calculation
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Funding
- NSFC [10774003]
- MOST of China [2007CB936200]
- Fundamental Research Funds for the Central Universities
- National Foundation for Fostering Talents of Basic Science [J0630311]
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By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.
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