Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4839-4845Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl202686n
Keywords
Wires; nitrides; nonpolar; multiple quantum wells
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Funding
- French government [ANR-05-NANO-016 Filemon35, ANR-08-NANO-031 Bonafo]
- ANR RTB
- Carnot Eclairage projects
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Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {1 (1) over bar 00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (similar to 16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.
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