Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4547-4554Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl201566c
Keywords
Graphene; copper; crystallography; CVD; EBSD; Raman
Categories
Funding
- Office of Naval Research (ONR) [N00014-06-10120, N00014-09-0180]
- AFOSR [FA9550-10-1-0082]
- Army Research Office (ARO)
- U.S. Department of Energy [DEFG02-07ER46453, DE-FG02-07ER46471]
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Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth Cu(310) temperatures above 900 degrees C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.
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