Journal
NANO LETTERS
Volume 11, Issue 2, Pages 385-390Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl102988w
Keywords
Nanoneedle; nanowire; III-V on Si; CMOS compatible; LED; APD
Categories
Funding
- DARPA [HR0011-04-1-0040]
- DoD National Security Science and Engineering Faculty
- Naval Post Graduate School [N00244-09-1-0013]
- UC
- NSF-IGERT
- NDSEG
- NSF
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Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photo-diodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.
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